cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 1/8 BTB5140N3 cystek product specification low vcesat pnp epitaxial planar transistor bv ceo -40v i c -2a r cesat(typ) 0.22 BTB5140N3 features ? low v ce (sat), v ce (sat)=-0.25v (max), at i c / i b =- 500ma /- 50ma ? pb-free package symbol outline BTB5140N3 sot-23 b base c collector e emitter absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo -40 collector-emitter voltage v ceo -40 emitter-base voltage v ebo -5 v collector current(dc) i c -2 peak collector current i cm -4 *1 peak base current i bm -1 a 300 *2 power dissipation p d 450 *3 mw 417 *2 thermal resistance, junction to ambient r ja 278 *3 thermal resistance, junction to case r jc 39 c/w operating junction and storage te mperature range tj;tstg -65~+150 c note :1 single pulse, pw=10ms 2 when mounted on a fr-4 pcb, single-sided copper, tinplated and standard footprint. 3 when mounted on a fr-4 pcb, single-sided copper, tinplated and mounting pad for collector 1 cm 2 .
cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 2/8 BTB5140N3 cystek product specification characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo -40 - - v i c =-50 a, i e =0 bv ceo -40 - - v i c =-1ma, i b =0 bv ebo -5 - - v i e =-50 a, i c =0 i cbo - - -100 na v cb =-40v, i e =0 i ceo - - -1 a v ce =-30v, i e =0 i ebo - - -100 na v eb =-5v, i c =0 *v ce(sat) - -75 -200 mv i c =-100ma, i b =-1ma *v ce(sat) - -110 -250 mv i c =-500ma, i b =-50ma *v ce(sat) - -196 -400 mv i c =-1a, i b =-100ma *r ce(sat) - 220 500 m ? i c =-500ma, i b =-50ma *v be(sat) - -860 -1 v i c =-1a, i b =-50ma *v be(on) - -762 -0.9 v v ce =-5v, i c =-1a *h fe 1 300 464 - - v ce =-5v, i c =-1ma *h fe 2 300 427 600 - v ce =-5v, i c =-100ma *h fe 3 250 360 - - v ce =-5v, i c =-500ma *h fe 4 160 300 - - v ce =-5v, i c =-1a f t - 75 - mhz v ce =-5v, i c =-10ma, f=100mhz cob - 20 - pf v cb =-10v, f=1mhz *pulse test : pulse width 300 s, duty cycle 2% ordering information device package shipping marking BTB5140N3 sot-23 (pb-free) 3000 pcs / tape & reel 2h moisture sensitivity level : conform to jedec level 1 recommended storage condition: temperature : 30 c humidity : 60% rh
cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 3/8 BTB5140N3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200u a 300u a 400u a 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5m a 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 1 2 3 4 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2ma 4ma 6ma 8ma 10ma 20ma emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 15ma 20ma 50ma current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=1v current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=2v
cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 4/8 BTB5140N3 cystek product specification typical characteristics(cont.) current gain vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) current gain---hfe ta=25c ta=75c ta=125c vce=5v saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=10ib saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=50ib saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125c 75c 25c vcesat=100ib saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vbesat@ic=10ib ta=25c ta=75c 125c on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) vbeon@vce=2v 125c 25c 75c
cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 5/8 BTB5140N3 cystek product specification typical characteristics(cont.) capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage---vr(v) capacitance---(pf) cib cob transition frequency vs collector current 10 100 1000 1 10 100 1000 collector current---ic(ma) transition frequency---ft(mhz) vce=5v power derating curves 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(mw) see note 3 on page 1 see note 2 on page 1
cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 6/8 BTB5140N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 7/8 BTB5140N3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c809n3 issued date : 2010.10.14 revised date : page no. : 8/8 BTB5140N3 cystek product specification sot-23 dimension *:typical h j k d a l g v c b 3 2 1 s style : pin 1.base 2.emitter 3.collector 3-lead sot-23 plastic surface mounted package cystek package code: n3 marking: product code date code: year+month year: 7 2007, 8 2008 month: 1 1, 2 2, ??? 9 9, a 10, b 11, c 12 2h inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0034 0.0070 0.085 0.177 b 0.0472 0.0630 1.20 1.60 k 0.0128 0.0266 0.32 0.67 c 0.0335 0.0512 0.89 1.30 l 0.0335 0.0453 0.85 1.15 d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1083 2.10 2.75 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0005 0.0040 0.013 0.10 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cysrek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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